H11AV1-M(2003) Просмотр технического описания (PDF) - Fairchild Semiconductor
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H11AV1-M Datasheet PDF : 10 Pages
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PHOTOTRANSISTOR OPTOCOUPLERS
H11AV1-M H11AV1A-M
H11AV2-M
H11AV2A-M
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
Test Conditions Symbol
Min
Typ*
Max
Unit
EMITTER
Input Forward Voltage (IF = 10 mA)
Reverse Leakage Current
DETECTOR
TA = 25°C
TA = -55°C
VF
TA = 100°C
(VR = 6.0 V)
IR
0.8
1.18
1.5
0.9
1.28
1.7
V
0.7
1.05
1.4
10
µA
Collector-Emitter Breakdown Voltage
(IC = 1.0 mA, IF = 0) BVCEO
70
100
V
Collector-Base Breakdown Voltage
(IC = 100 µA, IF = 0) BVCBO
70
120
V
Emitter-Collector Breakdown Voltage
(IE = 100 µA, IF = 0) BVECO
7
10
V
Collector-Emitter Dark Current
(VCE = 10 V, IF = 0)
ICEO
1
50
nA
Collector-Base Dark Current
(VCB = 10 V)
ICBO
0.5
nA
Capacitance
(VCE = 0 V, f = 1 MHz)
CCE
8
pF
ISOLATION CHARACTERISTICS
Characteristic
Input-Output Isolation Voltage
Isolation Resistance
Isolation Capacitance
Note
* Typical values at TA = 25°C
Test Conditions Symbol Min
(f = 60 Hz, t = 1 sec)
(VI-O = 500 VDC)
(VI-O = 0 V, f = 1 MHz)
VISO
RISO
CISO
7500
1011
Typ*
0.2
Max
2
Units
Vac(pk)
Ω
pF
© 2003 Fairchild Semiconductor Corporation
Page 3 of 10
6/30/03
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