BC857S Просмотр технического описания (PDF) - ON Semiconductor

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Компоненты Описание

производитель

BC857S

PNP, Multi-Chip, General-Purpose Amplifier

ON Semiconductor 

Thermal Characteristics(3)

Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

Max.

Total Device Dissipation

300

PD

Derate Above 25°C

2.4

RθJA Thermal Resistance, Junction to Ambient

415

Note:

3. PCB size: FR-4 76 x 114 x 1.57 mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

Unit

mW

mW/°C

°C/W

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

Conditions

V(BR)CEO

V(BR)CES

V(BR)CBO

V(BR)EBO

ICBO

hFE

VCE(sat)

VBE(on)

fT

Collector-Emitter Breakdown Voltage

Collector-Base Breakdown Voltage

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

Current Gain-Bandwidth Product

IC = -10 mA, IB = 0

IC = -10 μA, IE = 0

IC = -10 μA, IE = 0

IE = -10 μA, IC = 0

VCB = -30 V

VCB = -30 V, TA = 150 °C

IC = -2.0 mA, VCE = -5.0 V

IC = -10 mA, IB = -0.5 mA

IC = -100 mA, IB = -5.0 mA

IC = -2.0 mA, VCE = -5.0 V

IC = -10 mA, VCE = -5.0 V

IC = -10 mA, VCE = -5.0 V,

f = 100 MHz

Cob Output Capacitance

NF Noise Figure

VCB = -10 V, f = 1.0 MHz

IC = -0.2 mA, VCE = -5.0 V,

RS = 2.0 kΩ, f = 1.0 kHz,

BW = 200 Hz

Min.

-45

-50

-50

-5

125

-0.60

Typ. Max.

-15

-4

630

-0.30

-0.65

-0.75

-0.82

200

3.5

2.5

Unit

V

V

V

V

nA

μA

V

V

MHz

pF

dB

© 1998 Fairchild Semiconductor Corporation

BC857S Rev. 1.3

2

www.fairchildsemi.com

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