BC857S Просмотр технического описания (PDF) - Secos Corporation.
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BC857S Datasheet PDF : 2 Pages
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Elektronische Bauelemente
BC857S
PNP Silicon
Multi-Chip Transistor
250
200
(see Note 1)
150
100
50
0
0
100
200
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Power Derating Curve
0.5
IC / IB = 20
0.4
0.3
0.2
TA = 150°C
0.1
TA = 25°C
0
0.1
TA = -50°C
1
10
100
1000
IC, COLLECTOR CURRENT (mA)
Fig. 3, Collector Saturation Voltage vs Collector Current
1000
TA = 150°C
100
TA = 25°C
TA = -50°C
VCE = -5V
10
1
1
10
100
1000
IC, COLLECTOR CURRENT (mA)
Fig. 2, DC Current Gain vs Collector Current
TA = 25°C
100
VCE = -5V
10
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 4, Gain Bandwidth Product vs Collector Current
http://www.SeCoSGmbH.com
01-Jan-2006 Rev. B
Any changing of specification will not be informed individual
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