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BYW80PI-200 Просмотр технического описания (PDF) - STMicroelectronics

Номер в каталоге
Компоненты Описание
производитель
BYW80PI-200
ST-Microelectronics
STMicroelectronics ST-Microelectronics
BYW80PI-200 Datasheet PDF : 5 Pages
1 2 3 4 5
BYW80PI-200
Fig.1 : Average forward power dissipation versus Fig.2 : Peak current versus form factor.
average forward current.
14 PF(av)(W)
12
=0.1
=0.2
=0.5
=1
=0.0 5
10
8
6
T
4
2
IF(av)(A)
=tp/ T
tp
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14
200 IM(A)
175
T
150
P=10W
IM
125
100
=tp/T
tp
75
P=5W
50
P= 1 5 W
25
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
Fig.3 : Forward voltage drop versus forward
current (maximum values).
V FM (V )
1.8
1.6
Tj= 125 oC
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
IFM(A)
1
10
100
Fig.5 : Non repetitive surge peak forward current
versus overload duration.
Fig.4 : Relative variation of thermal impedance
junction to case versus pulse duration.
K
1.0
Zth(j-c) (tp. )
K=
Rt h( j -c )
0.5
=0.5
=0.2
= 0 .1
T
0.2
Single pulse
0.1
1.0E-03
tp(s)
1.0E-02
1.0E-01
=tp/T
tp
1. 0E+00
Fig.6 : Average current versus ambient
temperature. (duty cycle : 0.5)
100 IM(A)
90
80
70
60
50
40
30
IM
20
10
00.001
t
=0.5
t(s)
0.01
0.1
Tc=25 oC
Tc=70 oC
Tc=110 oC
1
12 IF(av)(A)
11
Rth(j-a)=Rth(j-c)
10
9
8
7
Rth(j-a)=15 o C/W
6
5
=0.5
T
4
3
2
1
=tp/T
tp
Tamb(o C)
0
0 20 40 60 80 100 120 140 160
3/5

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