TSAL7600 Просмотр технического описания (PDF) - Vishay Semiconductors

Номер в каталоге

Компоненты Описание

производитель

TSAL7600

High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

Vishay Semiconductors 

www.vishay.com

0° 10° 20°

30°

40°

1.0

0.9

50°

0.8

60°

0.7

70°

80°

0.6 0.4 0.2

94 8011

0 0.2

0.4 0.6

Fig. 9 - Relative Radiant Intensity vs. Angular Displacement

PACKAGE DIMENSIONS in millimeters

A

C

TSAL7600

Vishay Semiconductors

0.6

+ 0.2

- 0.1

Ø 5 - 0.3

Area not plane

+ 0.15

0.5 - 0.05

2.54 nom.

+ 0.15

0.5 - 0.05

technical drawings

according to DIN

specifications

Drawing-No. 6.544-5316.01-4

Issue: 3; 19.05.09

20327

Rev. 1.9, 24-Aug-11

4

Document Number: 81015

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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