BB301M Просмотр технического описания (PDF) - Renesas Electronics
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BB301M Datasheet PDF : 8 Pages
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BB301M
Noise Figure vs. Drain Current
4
VDS = 5 V
VG1 = 5 V
3
VG2S = 4 V
RG = variable
f = 200 MHz
2
1
0
5 10 15 20 25 30
Drain Current ID (mA)
Gain Reduction vs.
Gate2 to Source Voltage
60
VDS = 5 V
50
VG1 = 5 V
VG2S = 4 V
40
RG = 100 kΩ
f = 200 MHz
30
20
10
0
1
2
3
4
5
Gate2 to Source Voltage VG2S (V)
Drain Current vs. Gate Resistance
30
25
20
15
10
VDS = 5 V
5
VG1 = 5 V
VG2S = 4 V
0
10 20 50
100 200
500 1000
Gate Resistance RG (kΩ)
Input Capacitance vs.
Gate2 to Source Voltage
4
3
2
1 VDS = 5 V
VG1 = 5 V
RG = 100 kΩ
f = 1 MHz
0
1
2
3
4
5
Gate2 to Source Voltage VG2S (V)
Rev.3.00 Aug 10, 2005 page 6 of 7
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