BUZ41A Просмотр технического описания (PDF) - New Jersey Semiconductor

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производитель

BUZ41A

Power Transistor

New Jersey Semiconductor 

BUZ 41 A

Electrical Characteristics, at 7] = 25°C, unless otherwise specified

Parameter

Symbol

min.

Values

typ.

max.

Reverse Diode

Inverse diode continuous forward current Is

Tc = 25 °C

-

Inverse diode direct current,pulsed

ISM

7C = 25 °C

-

Inverse diode forward voltage

VGS = 0 V, Ip = 9 A

VSD

-

Reverse recovery time

trr

VR - 100 V, /F=/Si d/F/df = 100 A/MS

-

Reverse recovery charge

Qrr

VR = 100 V, /F=/s, d/ji/df = 100 A/us

-

-

4.5

-

18

1

1.2

350

-

3

-

Unit

A

V

ns

uC

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