BUZ41A Просмотр технического описания (PDF) - New Jersey Semiconductor

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BUZ41A

Power Transistor

New Jersey Semiconductor 

BUZ 41 A

Electrical Characteristics, at 7]= 25°C, unless otherwise specified

Parameter

Static Characteristics

Drain- source breakdown voltage

VGS = 0 V, /D = 0.25 mA, 7] = 25 °C

Gate threshold voltage

^GS^^DS, b = 1 mA

Zero gate voltage drain current

l/DS = 500 V, VGS = 0 V, 7] = 25 °C

l/bs = 500 V, VGS = 0 V, 7j = 125 °C

Gate-source leakage current

VGS = 20 V, VDS = 0 V

Drain-Source on-resistance

VGS = 10V, /D = 3 A

Symbol

min.

^(BR)DSS

500

^GS(th)

2.1

/DSS

-

-

/GSS

-

^DS(on)

-

Values

Unit

typ.

max.

V

-

-

3

4

uA

0.1

1

10

100

nA

10

100

Q

1.3

1.5

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