BUZ41A Просмотр технического описания (PDF) - New Jersey Semiconductor

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производитель

BUZ41A

Power Transistor

New Jersey Semiconductor 

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Lx

t/

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

1 N channel

1 Enhancement mode

Avalanche-rated

BUZ 41 A

TELEPHONE: (973) 376-2922

Pin1

Pin 2

D

Pin 3

Type

BUZ 41 A

VDS

500V

ID

4.5 A

ffDS(on)

1.5Q

Package

TO-220 AB

Maximum Ratings

Parameter

Continuous drain current

Tc = 36 °C

Pulsed drain current

Tc = 25 °C

Avalanche current, limited by 7jmax

Avalanche energy, periodic limited by 7jmax

Avalanche energy, single pulse

ID = 4.5 A, VDD = 50 V, RGS = 25 a

L = 28.4 mH, 7] = 25 °C

Gate source voltage

Power dissipation

TC = 25 °C

Operating temperature

Storage temperature

Thermal resistance, chip case

Thermal resistance, chip to ambient

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

Symbol

ID

fopuls

/AR

EAR

£AS

VGS

Plot

T\sig

^thJC

^thJA

Values

Unit

A

4.5

18

4.5

8

mJ

320

±20

V

W

75

-55... + 150 °C

-55... + 150

<1.67

K/W

75

E

55/150/56

NJ Semi-Conductors reserves the right to change test conditions,parameter limits and package dimensions without

notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going

to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissionsdiscovered in its use.

NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

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