BFN26 Просмотр технического описания (PDF) - Infineon Technologies

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Компоненты Описание

производитель

BFN26

NPN Silicon High-Voltage Transistors

Infineon Technologies 

BFN24, BFN26

Thermal Resistance

Parameter

Junction - soldering point1)

Symbol

RthJS

Value

≤ 210

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0 , BFN24

IC = 1 mA, IB = 0 , BFN26

V(BR)CEO

250

-

-

300

-

-

Collector-base breakdown voltage

IC = 100 µA, IE = 0 , BFN24

IC = 100 µA, IE = 0 , BFN26

V(BR)CBO

250

-

-

300

-

-

Emitter-base breakdown voltage

IE = 100 µA, IC = 0

V(BR)EBO 6

-

-

Collector-base cutoff current

VCB = 200 V, IE = 0 , BFN24

VCB = 250 V, IE = 0 , BFN26

VCB = 200 V, IE = 0 , TA = 150 °C, BFN24

VCB = 250 V, IE = 0 , TA = 150 °C, BFN26

ICBO

-

-

0.1

-

-

0.1

-

-

20

-

-

20

Emitter-base cutoff current

VEB = 5 V, IC = 0

DC current gain2)

IC = 1 mA, VCE = 10 V

IC = 10 mA, VCE = 10 V

IC = 30 mA, VCE = 10 V, BFN24

IC = 30 mA, VCE = 10 V, BFN26

IEBO

hFE

-

- 100

25

-

-

40

-

-

40

-

-

30

-

-

Collector-emitter saturation voltage2)

IC = 20 mA, IB = 2 mA, BFN24

IC = 20 mA, IB = 2 mA, BFN26

VCEsat

-

-

0.4

-

-

0.5

Base emitter saturation voltage2)

IC = 20 mA, IB = 2 mA

VBEsat

-

-

0.9

1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)

2Pulse test: t < 300µs; D < 2%

Unit

K/W

Unit

V

µA

nA

-

V

2

2011-12-19

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