FZT694B Просмотр технического описания (PDF) - Diodes Incorporated.

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FZT694B

120V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN SOT223

Diodes Incorporated. 

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Collector-Base Breakdown Voltage

BVCBO

120

—

Collector-Emitter Breakdown Voltage (Note 11)

BVCEO

120

—

Emitter-Base Breakdown Voltage

Collector-Base Cutoff Current

Collector-Emitter Cutoff Current

Emitter Cutoff Current

BVEBO

7

—

ICBO

—

—

ICES

—

—

IEBO

—

—

DC Current Gain (Note 11)

500

—

hFE

400

—

150

—

—

—

Collector-Emitter Saturation Voltage (Note 11)

VCE(sat)

—

—

Base-Emitter Saturation Voltage (Note 11)

Base-Emitter Turn-On Voltage (Note 11)

Input Capacitance

Output Capacitance

Current Gain-Bandwidth Product

Turn-On Time

Turn-Off Time

VBE(sat)

—

VBE(on)

—

Cibo

—

Cobo

—

fT

130

ton

—

toff

—

—

—

200

9

—

80

2,900

Note:

11. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.

Max

—

—

—

100

100

100

—

—

—

250

500

0.9

0.9

—

—

—

—

—

FZT694B

Unit

V

V

V

nA

nA

nA

—

mV

V

V

pF

pF

MHz

ns

ns

Test Condition

IC = 100µA

IC = 10mA

IE = 100µA

VCB = 100V

VCE = 100V

VEB = 6V

IC = 100mA, VCE = 2V

IC = 200mA, VCE = 2V

IC = 400mA, VCE = 2V

IC = 100mA, IB = 0.5mA

IC = 400mA, IB = 5mA

IC = 1A, IB = 10mA

IC = 1A, VCE = 2V

VEB = 0.5V, f = 1MHz

VCB = 10V, f = 1MHz

VCE = 5V, IC = 50mA, f=50MHz

VCC = 50V, IC = 100mA

IB1 = -IB2 = 10mA

FZT694B

Document number: DS33158 Rev. 4 - 2

4 of 7

www.diodes.com

January 2016

© Diodes Incorporated

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