CG2H40010 Просмотр технического описания (PDF) - Cree, Inc

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CG2H40010

10 W, DC - 6 GHz, RF Power GaN HEMT

Cree, Inc 

CG2H40010

10 W, DC - 6 GHz, RF Power GaN HEMT

Cree’s CG2H40010 is an unmatched, gallium nitride (GaN) high electron

mobility transistor (HEMT). The CG2H40010, operating from a 28 volt rail,

offers a general purpose, broadband solution to a variety of RF and microwave

applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth

capabilities making the CG2H40010 ideal for linear and compressed amplifier

circuits. The transistor is available in both screw-down, flange and solder-

down, pill packages.

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FEATURES

• Up to 8 GHz Operation

• 18 dB Small Signal Gain at 2.0 GHz

• 16 dB Small Signal Gain at 4.0 GHz

• 17 W typical PSAT

• 70 % Efficiency at PSAT

• 28 V Operation

APPLICATIONS

• 2-Way Private Radio

• Broadband Amplifiers

• Cellular Infrastructure

• Test Instrumentation

• Class A, AB, Linear amplifiers suitable for

OFDM, W-CDMA, EDGE, CDMA waveforms

Subject to change without notice.

www.cree.com/wireless

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