BUZ76 Просмотр технического описания (PDF) - Inchange Semiconductor
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BUZ76 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
BUZ76
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID= 1mA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 1.5A
IGSS
Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 400V;VGS= 0
VSD
Diode Forward Voltage
IF= 6A;VGS= 0
MIN MAX UNIT
400
V
2.1
4
V
1.8
Ω
±100 nA
250
uA
1.4
V
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