BUZ76 Просмотр технического описания (PDF) - Inchange Semiconductor

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BUZ76

N-Channel MOSFET Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc N-Channel MOSFET Transistor

isc Product Specification

BUZ76

DESCRIPTION

·3A,400V

·Drain Source Voltage-

: VDSS= 200V(Min)

·Static Drain-Source On-Resistance

: RDS(on) = 1.8Ω(Max)

·High Input Impedance

·Majority Carrier Device

APPLICATIONS

·switching regulators, switching converters

·motor drivers,relay drivers and drivers for high-power

Bipolar switching transistors reguiring high speed and

gate-driver power.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL ARAMETER

VALUE UNIT

VDSS

Drain-Source Voltage (VGS=0)

400

V

VGS

Gate-Source Voltage

±20

V

ID

Drain Current-continuous@ TC=37℃

3

A

Ptot

Total Dissipation@TC=25℃

40

W

Tj

Max. Operating Junction Temperature -55-150 ℃

Tstg

Storage Temperature Range

-55-150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c Thermal Resistance,Junction to Case

Rth j-a Thermal Resistance,Junction to Ambient

3.1 ℃/W

75 ℃/W

isc website：www.iscsemi.cn

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