S595T Просмотр технического описания (PDF) - Vishay Semiconductors
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S595T Datasheet PDF : 10 Pages
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S595T / S595TR / S595TRW
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
250
40
VDS = 5 V
f = 200 MHz
200
30
150
20
100
10
50
0
0
95 10759
25 50 75 100 125 150
Tamb – AmbientTemperature (° C )
0
0
1
2
3
4
95 11159
VG2S – Gate 2 Source Voltage ( V )
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 4. Forward Transadmittance vs. Gate 2 Source Voltage
20
16
12
8
4
0
0
95 11157
VG2S = 4 V
3V
2V
1.5 V
1V
1
2
3
4
5
VDS – Drain Source Voltage ( V )
Figure 2. Drain Current vs. Drain Source Voltage
4.0
3.5
VDS = 5 V
f = 200 MHz
3.0
2.5
2.0
1.5
1.0
0.5
0
0
1
2
3
4
5
13634
VG2S – Gate 2 Source Voltage ( V )
Figure 5. Gate 1 Input Capacitance vs. Gate 2 Source Voltage
20
VDS = 5 V
16
12
8
4
0
0
1
2
3
4
95 11158
VG2S – Gate 2 Source Voltage ( V )
Figure 3. Drain Current vs. Gate 2 Source Voltage
2.0
VDS = 4 V
f = 200 MHz
1.5
1.0
0.5
0.0
3
4
5
6
7
13635
VDS – Drain Source Voltage ( V )
Figure 6. Output Capacitance vs. Drain Source Voltage
www.vishay.com
4
Document Number 85049
Rev. 1.7, 08-Sep-08
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