CY7C197N(2011) Просмотр технического описания (PDF) - Cypress Semiconductor

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производитель

CY7C197N
(Rev.:2011)

256 K × 1 Static RAM

Cypress Semiconductor 

CY7C197N

Maximum Ratings

Exceeding maximum ratings may impair the useful life of the

device. These user guidelines are not tested.

Storage temperature ................................ –65 °C to +150 °C

Ambient temperature with

power applied ........................................... –55 °C to +125 °C

Supply voltage to ground potential

(Pin 24 to Pin 12)..........................................–0.5 V to +7.0 V

DC voltage applied to outputs

in High Z state[1] .................................. –0.5 V to VCC + 0.5 V

Electrical Characteristics

DC input voltage[1]............................... –0.5 V to VCC + 0.5 V

Output current into outputs (LOW) .............................. 20 mA

Static discharge voltage.......................................... > 2001 V

(per MIL-STD-883, Method 3015)

Latch up current..................................................... > 200 mA

Operating Range

Range

Commercial

Ambient Temperature

0 °C to +70 °C

VCC

5 V ± 10%

Over the Operating Range

Parameter

Description

VOH

Output HIGH voltage

VOL

Output LOW voltage

VIH

Input HIGH voltage

VIL

Input LOW voltage[1]

IIX

Input load current

IOZ

Output leakage current

IOS

Output short circuit current[2]

ICC

VCC operating supply current

ISB1

Automatic CE power-down

current—TTL inputs[3]

ISB2

Automatic CE power-down

current—CMOS inputs[3]

Test Conditions

VCC = Min, IOH = –4.0 mA

VCC = Min, IOL=12.0 mA

GND < VI < VCC

GND < VO < VCC, Output Disabled

VCC = Max, VOUT = GND

VCC = Max, IOUT = 0 mA, f = fMAX = 1/tRC

Max VCC, CE > VIH, VIN > VIH or

VIN < VIL, f = fMAX

Max VCC, CE > VCC – 0.3 V,

VIN > VCC – 0.3 V or VIN < 0.3 V

-25

Unit

Min

Max

2.4

–

V

–

0.4

V

2.2 VCC + 0.3 V V

–0.5

0.8

V

–5

+5

A

–5

+5

A

–

–300

mA

–

95

mA

–

30

mA

–

15

mA

Capacitance[4]

Parameter

CIN

COUT

Description

Input capacitance

Output capacitance

Test Conditions

TA = 25 °C, f = 1 MHz, VCC = 5.0 V

Max

Unit

8

pF

10

pF

Notes

1. V(min.) = -2.0 V for pulse durations of less than 20 ns.

2. Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.

3. A pull-up resistor to VCC on the CE input is required to keep the device deselected during VCC power-up, otherwise ISB will exceed values given.

4. Tested initially and after any design or process changes that may affect these parameters.

Document #: 001-06495 Rev. *D

Page 4 of 13

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