ESJA53-18A Просмотр технического описания (PDF) - SUNMATE electronic Co., LTD

Номер в каталоге

Компоненты Описание

производитель

ESJA53-18A

5mA Axial Leaded High Voltage Silicon Diode

SUNMATE electronic Co., LTD 

Features

ESJA53-18A

5mA Axial Leaded High Voltage Silicon Diode

Mechanical Data

· Weight: 0.3 grams (approx.)

· Vibration Proof:5 G

Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified

Items

Repetitive peak reverse voltage

Non-repetitive peak forward current

Average forward current

Allowable junction temperature

Conditions Symbols

VRRM

50Hz Sine-half

wave peak value

IFSM

50Hz Sine-wave IAV

Tj

Storage Temperature range

Tstg

Allowable operating case temperature

Tc

Maximum forward voltage drop

1F=10mA

VF

Maximum reverse current

Maximum reverse current

Maximum reverse recovery time

VR=18KV

IR1

VR=18KV ,100°C

IR2

1F=2mA,1R=4mA Trr

Maximum junction capacitance F=1MHz,VR=0V

Cj

Ratings

18

0.5

5

120

-40—120

100

66

2

5

0.08

1

Units

KV peak

A peak

mA

°C

°C

°C

V

uA

uA

uS

PF

1 of 2

Share Link: