Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-Emitter Sustaining Voltage lc= 0.2A; L= 25mH
VcE(sat) Collector-Emitter Saturation Voltage lc= 3A; IB= 0.6A
VsE(sat) Base-Emitter Saturation Voltage
lc= 3A; IB= 0.6A
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; lc= 0
hFE-i
DC Current Gain
lc= 0.1 A; VCE= 5V
hFE-2
ft
DC Current Gain
lc= 3A; VCE= 5V
Current-Gain—Bandwidth Product lc= 0.5A; VCE= 10V
Switching Times; Resistive Load
ton
Turn-on Time
ts
Storage Time
tf
Fall Time
lc=3A; IB1=-IB2=0.6A;
Vcc= 1 00V
2SC3170
MIN TYP. MAX UNIT
400
V
1.0
V
1.5
V
0.1 mA
0.1 mA
15
8
8
MHz
1.0
us
3.0
us
1.0
us