C3170 Просмотр технического описания (PDF) - New Jersey Semiconductor

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C3170

Silicon NPN Power Transistor

New Jersey Semiconductor 

j

\S

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

, Una.

Silicon NPN Power Transistor

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

2SC3170

DESCRIPTION

• Collector-Emiiter Sustaining Voltage-'

: VcEoisusr 400V(Min.)

• Low Collector Saturation Voltage

:VCE(sat)=1.0V(Max.)@lc=3A

• High Speed Switching

^^ 1

iiI

12 3

PIN 1.B3 ASE

J. COLLECTOR

3. EMITTER

TO-220Fa package

APPLICATIONS

• Designed for high speed switching applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25'C)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

500

V

VCEO

Collector-Emitter Voltage

400

V

VEBO

Emitter-Base Voltage

7

V

Ic

Collector Current-Continuous

7

A

ICM

Collector Current-Peak

Collector Power Dissipation

@Ta=25'C

PC

Collector Power Dissipation

@TC=25'C

Ti '• Junction Temperature

15

A

2

W

40

150

'C

Tstg

Storage Temperature Range

-55-150 "C

-. G -.*.

». .

t!

A

^

ff

/

"i

u

J*

K

J

»~ -+-L

»--^V

r r T J N D -*• R'

mm

DIM WIN

A 16.85

B 9.90

C 4,35

D 0.75

F 3.20

G 6.90

H S.15

J 0.45

K 13.35

L 1.10

N 4.93

Q 4.85

R 2.95

S 2.70

U 1,75

V 1,30

MAX

17.15

10.10

4.65

0.80

3.40

7.10

5.45

0..75

13.65

1.30

5.1 S

5,15

3.25

2.90

2,06

1.50

N.I Semi-Cniitluaors reserves the right to change test conditions, parameter limits and package dimensions without

noiico. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time ofgoinu

In pros-;, I |o\\e\cr. N.I Semi-Conductors assunios no responsibility for au> errors or omissions discovered in its use.

N.I Scnii-C'unduciors cncniira.ues customers to verify that datasheets are current before placing orders.

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