MJ21194 Просмотр технического описания (PDF) - Inchange Semiconductor

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MJ21194

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

MJ21194

ELECTRICAL CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC=100mA; IB=B 0

VCE(sat)-1 Collector-Emitter Saturation Voltage IC=8A ;IB=B 0.8A

VCE(sat)-2 Collector-Emitter Saturation Voltage IC=16A ;IB=3.2A

VBE(on) Base-Emitter On Voltage

IC=8A ; VCE=5V

ICEO

Collector Cutoff Current

VCE=200V,IB=0

ICEX

Collector Cutoff Current

VCE=250V; VBE(off)=1.5V

IEBO

Emitter Cutoff Current

VEB=5V; IC=0

hFE-1

DC Current Gain

IC=8A; VCE=5V

hFE-2

DC Current Gain

IC=16A; VCE=5V

COB

Collector Capacitance

IE= 0; f=1MHz ; VCB=-10V

fT

Current Gain-Bandwidth Product

IC=1A ;VCE= 10V; ftest=1MHz

MIN TYP. MAX UNIT

250

V

1.4

V

4

V

2.2

V

0.1 mA

0.1 mA

100 μA

25

75

8

500 pF

4

MHz

isc Website：www.iscsemi.cn

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