MTD2955E Просмотр технического описания (PDF) - ON Semiconductor

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MTD2955E

Power Field Effect Transistor DPAK for Surface Mount

ON Semiconductor 

MTD2955E

TYPICAL ELECTRICAL CHARACTERISTICS

- 24

TJ = 25°C

- 18

- 12

- 6

- 24

VGS = 10 V

9V

8V

- 20

7V

- 16

-12

6V

- 8

5V

- 4

VDS ≥ 10 V

TJ = - 55°C

25°C

100°C

0

0 -1 -2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 -10

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

0

-2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

0.9

VGS = 10 V

0.8

0.7

TJ = 100°C

0.6

0.5

25°C

0.4

0.3

- 55°C

0.2

0.1

0 - 2 - 4 - 6 - 8 -10 -12 -14 -16 - 18 - 20 - 22 - 24

ID, DRAIN CURRENT (AMPS)

Figure 3. On−Resistance versus Drain Current

and Temperature

0.48

TJ = 25°C

0.44

0.40

0.36

VGS = 10 V

0.32

15 V

0.28

0.24

0.20

0 - 2 - 4 - 6 - 8 -10 -12 -14 -16 -18 - 20 - 22 - 24

ID, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

1.8

VGS = 10 V

1.6 ID = 6 A

1.4

1.2

1.0

1000

VGS = 0 V

100

TJ = 125°C

100°C

25°C

0.8

0.6

- 50 - 25

0 25 50 75 100

TJ, JUNCTION TEMPERATURE (°C)

125 150

Figure 5. On−Resistance Variation with

Temperature

10

-15 - 20 - 25 - 30 - 35 - 40 - 45 - 50 - 55 - 60

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 6. Drain−To−Source Leakage

Current versus Voltage

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