MTD2955E
ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless Otherwise Noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ±15 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 1)
IDSS
IGSS
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Temperature Coefficient (Negative)
VGS(th)
Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 6.0 Adc)
Drain−Source On−Voltage (VGS = 10 Vdc)
(ID = 12 Adc)
(ID = 6.0 Adc, TJ = 125°C)
Forward Transconductance (VDS = 13 Vdc, ID = 6.0 Adc)
DYNAMIC CHARACTERISTICS
RDS(on)
VDS(on)
gFS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 2)
Ciss
Coss
Crss
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
(Figure 8)
(VDD = 30 Vdc, ID = 12 Adc,
VGS = 10 Vdc,
RG = 9.1 W)
(VDS = 48 Vdc, ID = 12 Adc,
VGS = 10 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
Forward On−Voltage (Note 1)
(IS = 12 Adc, VGS = 0 Vdc)
VSD
(IS = 12 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
(Figure 14)
(IS = 12 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
INTERNAL PACKAGE INDUCTANCE
trr
ta
tb
QRR
Internal Drain Inductance
LD
(Measured from the drain lead 0.25″ from package to center of die)
Internal Source Inductance
LS
(Measured from the source lead 0.25” from package to source bond pad)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
Min
Typ
Max
Unit
60
−
−
85
−
Vdc
−
mV/°C
mAdc
−
−
10
−
−
100
−
−
100
nAdc
2.0
−
4.0
Vdc
−
3.0
−
mV/°C
−
0.26
0.30
Ohm
Vdc
−
−
4.3
−
−
3.8
3.0
4.8
−
mhos
−
565
700
pF
−
225
315
−
45
100
−
9.0
20
ns
−
39
80
−
17
35
−
8.0
20
−
16
32
nC
−
3.0
−
−
6.0
−
−
5.0
−
Vdc
−
2.2
3.8
−
1.8
−
−
100
−
ns
−
75
−
−
25
−
−
0.475
−
mC
−
4.5
−
nH
−
7.5
−
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