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MTD2955E

Power Field Effect Transistor DPAK for Surface Mount

ON Semiconductor 

MTD2955E

MAXIMUM RATINGS (TC = 25°C Unless Otherwise Noted)

Rating

Symbol

Value

Unit

Drain−Source Voltage

Drain−Gate Voltage (RGS = 1.0 MW)

Gate−Source Voltage

− Continuous

− Non−Repetitive (tp ≤ 10 ms)

VDSS

VDGR

VGS

VGSM

60

Vdc

60

Vdc

$ 15

Vdc

$ 25

Vpk

Drain Current − Continuous

− Continuous @ 100°C

− Single Pulse (tp v 10 ms)

ID

12

Adc

ID

7.0

IDM

36

Apk

Total Power Dissipation

Derate above 25°C

Total Power Dissipation @ TA = 25°C, When Mounted to Minimum Recommended Pad Size

Operating and Storage Temperature Range

Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C

(VDD = 25 Vdc, VGS = 10 Vdc, IL = 12 Apk, L = 3.0 mH, RG = 25 W)

PD

TJ, Tstg

EAS

75

0.6

1.75

−55 to 150

216

Watts

W/°C

Watts

°C

mJ

Thermal Resistance

Junction−to−Case

Junction−to−Ambient

Junction−to−Ambient, When Mounted to Minimum Recommended Pad Size

RqJC

RqJA

RqJA

°C/W

1.67

100

71.4

Maximum Temperature for Soldering Purposes, 1/8” From Case for 10 Seconds

TL

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

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