MTD2955E Просмотр технического описания (PDF) - ON Semiconductor

Номер в каталоге

Компоненты Описание

производитель

MTD2955E

Power Field Effect Transistor DPAK for Surface Mount

ON Semiconductor 

MTD2955E

Power Field Effect

Transistor DPAK for Surface

Mount

P−Channel Enhancement−Mode Silicon

Gate

This advanced MOSFET is designed to withstand high energy in the

avalanche and commutation modes. The new energy efficient design

also offers a drain−to−source diode with a fast recovery time.

Designed for low voltage, high speed switching applications in power

supplies, converters and PWM motor controls, these devices are

particularly well suited for bridge circuits where diode speed and

commutating safe operating areas are critical and offer additional

safety margin against unexpected voltage transients.

• Avalanche Energy Specified

• Source−to−Drain Diode Recovery Time Comparable to a Discrete

Fast Recovery Diode

• Diode is Characterized for Use in Bridge Circuits

• IDSS and VDS(on) Specified at Elevated Temperature

• Surface Mount Package Available in 16 mm, 13 inch /

2500 Unit Tape & Reel, Add T4 Suffix to Part Number

• Replaces the MTD2955

http://onsemi.com

POWER FET

12 AMPERES

60 VOLTS

RDS(on) = 0.3 W

D

G

S

MARKING

DIAGRAM

DPAK

SUFFIX

CASE 369A

Style 2

YWW

T2955E

T2955E

Y

WW

= Specific Device Code

= Year

= Work Week

ORDERING INFORMATION

Device

MTD2955ET4

Package

DPAK

Shipping†

2500/ Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

© Semiconductor Components Industries, LLC, 2013

1

May, 2013 − Rev. 8

Publication Order Number:

MTD2955E/D

Share Link: