2SD2014 Просмотр технического описания (PDF) - SavantIC Semiconductor
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2SD2014 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2014
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=3A ;IB=3mA
VBEsat
Base-emitter saturation voltage
IC=3A ;IB=3mA
ICBO
Collector cut-off current
VCB=120V; IE=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE
DC current gain
IC=3A ; VCE=2V
fT
Transition frequency
IE=-0.1A ; VCE=12V
COB
Collector output capacitance
f=1MHz;VCB=10V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=3.0A; IB1=-IB2=10mA
VCC=30V ,RL=10C
MIN TYP. MAX UNIT
80
V
1.5
V
2.0
V
10
µA
10
mA
2000
75
MHz
45
pF
1.0
µs
4.0
µs
1.5
µs
2
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