C4980 Просмотр технического описания (PDF) - New Jersey Semiconductor
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C4980 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistors
2SC4980
ELECTRICAL CHARACTERISTICS
TC=25"C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
WIN TYP. MAX UNIT
VcEO(SUS) Collector-Emitter Sustaining Voltage lc= 50mA; IB= 0
80
V
VcE(sat) Collector-Emitter Saturation Voltage IC=2.5A;IB=0.13A
VBE(sat) Base-Emitter Saturation Voltage
IC=2.5A;IB=0.13A
ICBO
Collector Cutoff Current
At rated Voltage
0.3
V
1.2
V
100
nA
ICEO
Collector Cutoff Current
At rated Voltage
100
uA
IEBO
Emitter Cutoff Current
At rated Voltage
100
uA
hFE
DC Current Gain
lc= 2.5A; VCE= 2V
70
fr
Current-Gain—Bandwidth Product lc=0.5A; VCE=10V
50
MHz
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
lc= 2.5A, IB1= 0.25A; IB2= -0.25A;
RL=12fi;VBB2=4V
0.3
us
1.5
us
0.2
VS
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