MBRF1090-E3/4W Просмотр технического описания (PDF) - Vishay Semiconductors
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MBRF1090-E3/4W Datasheet PDF : 6 Pages
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MBR10xxx-E3, MBRF10xxx-E3, MBRB10xxx-E3
www.vishay.com
Vishay General Semiconductor
100
TJ = 150 °C
10
TJ = 125 °C
1
0.1
TJ = 25 °C
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
100
TJ = 150 °C
10
TJ = 125 °C
1
0.1
0.01
0.001
10
TJ = 25 °C
20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
Junction to Case
10
1
0.1
0.01
MBR(B)
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
10
Junction to Case
1
0.1
0.01
0.001
0.1
1
10
t - Pulse Duration (s)
MBRF
100
Fig. 7 - Typical Transient Thermal Impedance
100
10
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
Revision: 11-Jun-18
3
Document Number: 89034
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