EMH2408
4.5
VDS=10V
4.0 ID=4A
VGS -- Qg
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Total Gate Charge, Qg -- nC
IT13507
PD -- Ta
1.4
When mounted on ceramic substrate
(900mm2✕0.8mm)
1.2
3
2 IDP=16A
ASO
PW≤10μs
10
7
5
ID=4A
1m1s00μs
3
2
1.0
7
5
3
2
Operation in this
area is limited by
RDDCSo(poenra)t.ion1(0T0am=1s205m°Cs )
0.1
7
5
3 Ta=25°C
2 Single pulse
0.01 When mounted on ceramic substrate (900mm2✕0.8mm) 1unit
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3
Drain-to-Source Voltage, VDS -- V IT13508
1.0
0.8
0.6
Total
1unit
dissipation
0.4
0.2
0
0
20
40
60
80 100 120 140 160
Ambient Temperature, Ta -- °C
IT13509
No. A1170-4/7