2SA1943 Просмотр технического описания (PDF) - JILIN SINO-MICROELECTRONICS CO., LTD.

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Компоненты Описание

производитель

2SA1943

PNP Epitaxial Silicon Transistor

JILIN SINO-MICROELECTRONICS CO., LTD. 

R

2SA1943 SERIES

特征曲线 ELECTRICAL CHARACTERISTICS(2SA1943 curves)

IC-VCE

DC Current Gain

Common emitter Tc = 25°C

Single pulse test

Tc=100℃

Tc=100℃

Tc=25℃

Collector-emitter voltage VCE (V)

Saturation Voltage

Common emitter

IC/IB = 10

Single pulse test

Tc=100℃

Tc=25℃

Collector corrent IC (A)

Power Derating

Common emitter

VCE = -5 V Single pulse test

Collector corrent IC (A)

Base-Emitter Voltage

Tc=25℃

Tc=100℃

Common emitter

IC/IB = 10

Single pulse test

Collector corrent IC (A)

Safe Operating Area

Infinite heat sink

Ambient temperature TC（℃）

版本：201603A

TC=25℃ DC Operation

1ms

Single nonrepetitive pulse Tc = 25°C

Curves must be derated linear

with increase in temperature.

10ms

100ms

Collector-emitter voltage VCE (V)

3/8

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