GSH10A10B Просмотр технического описания (PDF) - Nihon Inter Electronics

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Компоненты Описание

производитель

GSH10A10B

Schottky Barrier Diode

Nihon Inter Electronics 

S B D T y p e : GSH10A10B

FEATURES

*Similar to TO-220AB Case

*Low Forward Voltage Drop

*Low Power Loss,High Efficiency

*High Surge Capability

*Tj=150 °C operation

OULINE DRAWING

Maximum Ratings

Rating

Repetitive Peak Reverse Voltage

Average Rectified Output Current

RMS Forward Current

Surge Forward Current

Operating JunctionTemperature Range

Storage Temperature Range

Mounting torque

Symbol

VRRM

IO

IF(RMS)

IFSM

Tjw

Tstg

Ftor

Approx Net Weight: 1.9g

GSH10A10B

100

10

Tc=120°C

50 Hz half Sine Wave

Resistive Load

15.7

180

50Hz Half Sine Wave ,1cycle

Non-repetitive

-40 to +150

-40 to +150

recommended torque = 0.5

Unit

V

A

A

A

°C

°C

N•m

Electrical • Thermal Characteristics

Characteristics

Peak Reverse Current

Peak Forward Voltage

Thermal Resistance

Symbol

IRM

VFM

Rth(j-c)

Conditions

Tj= 25°C, VRM= VRRM

Tj= 25°C, IFM= 10 A

Junction to Case

Min.

-

-

-

Typ.

-

-

-

Max.

1

0.88

3

Unit

mA

V

°C /W

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