2SK4177 Просмотр технического описания (PDF) - ON Semiconductor

Номер в каталоге

Компоненты Описание

производитель

2SK4177

N-Channel Power MOSFET

ON Semiconductor 

2SK4177

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain “Miller” Charge

Diode Forward Voltage

V(BR)DSS

IDSS

IGSS

VGS(off)

| yfs |

RDS(on)

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

Conditions

ID=1mA, VGS=0V

VDS=1200V, VGS=0V

VGS=±16V, VDS=0V

VDS=10V, ID=1mA

VDS=20V, ID=1A

ID=1A, VGS=10V

VDS=30V, f=1MHz

See Fig.2

VDS=200V, VGS=10V, ID=2A

IS=2A, VGS=0V

Ratings

Unit

min

typ

max

1500

V

100

μA

±10

μA

2.5

3.5

V

0.7

1.4

S

10

13

Ω

380

pF

70

pF

40

pF

12

ns

37

ns

152

ns

59

ns

37.5

nC

2.7

nC

20

nC

0.88

1.2

V

Fig.1 Unclamped Inductive Switching Test Circuit

D

L

≥50Ω

RG

G

2SK4177

10V

0V

50Ω

S

VDD

Fig.2 Switching Time Test Circuit

VIN

10V

0V

VIN

PW≤10μs

D.C.≤1%

G

VDD=200V

ID=1A

RL=190Ω

D

VOUT

2SK4177

P.G

50Ω

S

Ordering Information

Device

2SK4177-DL-1E

Package

TO-263-2L

Shipping

800pcs./reel

memo

Pb Free

No. A0869-2/7

Share Link: