11ES1 Просмотр технического описания (PDF) - Nihon Inter Electronics

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производитель

11ES1

DIODE

Nihon Inter Electronics 

ｓ

DIODE Type : 11ES1

FEATURES

* Miniature Size

* Low Forward Voltage drop

* Low Reverse Leakage Current

* High Surge Capability

* 26mm and 52mm Inside Tape Spacing Package

Available

OUTLINE DRAWING

Maximum Ratings

Approx Net Weight:0.17g

Rating

Repetitive Peak Reverse Voltage

Non-repetitive Peak Reverse Voltage

Average Rectified Output Current

RMS Forward Current

Surge Forward Current

Operating JunctionTemperature Range

Storage Temperature Range

Symbol

VRRM

VRSM

IO

IF(RMS)

IFSM

Tjw

Tstg

11ES1

100

250

0.98

Ta=25°C *1 50Hz Half Sine

1.0

Ta=50°C *2 Wave Resistive Load

1.57

45

50Hz Half Sine Wave,1cycle,

Non-repetitive

- 40 to + 150

- 40 to + 150

Unit

V

V

A

A

A

°C

°C

Electrical • Thermal Characteristics

Characteristics

Symbol

Conditions

Min. Typ. Max.

Unit

Peak Reverse Current

IRM Tj= 25°C, VRM= VRRM

- - 50

µA

Peak Forward Voltage

VFM Tj= 25°C, IFM= 1.0A

- - 1.0

V

Thermal Resistance

Rth(j-a) Junction to Ambient

*1

*2

- - 140

110

°C/W

*1:Without Fin or P.C. Board

*2:P.C. Board Mounted (L=3mm,Print Land=5x5mm,Both Sides)

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