2SC3650 Просмотр технического описания (PDF) - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

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производитель

2SC3650

Plastic-Encapsulate Transistors

GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. 

Plastic-Encapsulate Transistors

FEATURES

• High DC current gain.

•Low collector-to-emitter saturation voltage.

•Large current capacity.

•Very small size making it easy to provide

high- Density,small-sized hybrid IC S

Marking: CF

Maximum Ratings (Ta=25

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power dissipation

Junction Temperature

Storage Temperature

unless otherwise noted)

Symbol

Value

VCBO

30

VCEO

25

VEBO

15

IC

1.2

PC

0.5

TJ

150

Tstg

-55to +150

Unit

V

V

V

A

W

2SC3650 (NPN)

1. BASE

2. COLLECTO

3. EMITTER

SOT-89

ELECTRICAL CHARACTERISTICS ( @ Ta=25

Parameter

Symbol

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

VCBO

VCEO

VEBO

ICBO

IEBO

hFE

VCE(sat)

VBE(sat)

Transition frequency

fT

Collector output capacitance

Cob

unless otherwise specified)

Test conditions

IC=10uA,IE=0

IC=1mA,IB=0

IE=10uA,IC=0

VCB=20V,IE=0

VEB=10V,IC=0

VCE=5V,IC=500mA

IC=0.5A, IB=0.01A

IC=0.5A, IB=0.01A

VCE=10V,Ic=50mA

VCB=10V,IE=0,f=1MHz

Min Typ Max Unit

30

V

25

V

15

V

0.1 μA

0.1 μA

800 1500 3200

0.12 0.5 V

0.85 1.2 V

220

MHz

17

pF

GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.

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