RF2132 Просмотр технического описания (PDF) - RF Micro Devices
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RF2132 Datasheet PDF : 6 Pages
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RF2132
Vcc = 4.8 V
2
Vpc = 4.0 V
RF IN
100 pF
VPC
Application Schematic
VCC
1 nF
1.8 nH
1
100 pF
2
3
4
5
18 kΩ
6
7
8
1 nF
BIAS
100 pF
16
6.8 nH
15
14
3 pF
13
12
11
3.3 nH
10
12 pF
9
100 pF
4.3 pF
RF OUT
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
Power supply filtering/bypassing for V cc
P1-1
Interstage tuning (L1) for
centering output frequency
RF IN
J1
C8
33 pF
L1
1.8 nH
1
C6
100 pF
2
3
4
Adds bias to the first
R1
5
amplifier stage for
18 kΩ
improved linearity
6
7
P1-3
C12
3.3 µF
8
C13
1 nF
C14
100 pF
C1
100 nF
C2
11 µF
C3
1 µF
16
15
14
13
12
11
BIAS
10
9
C4
1 nF
C5
100 pF
L2
6.8 nH
C7
3 pF
Vcc = 4.8 V
Vpc = 4.0 V
P1
P1-1 1 VCC
2 GND
P1-3 3
PC
Bias inductor for the
amplifier output stage
Harmonic trap: C7 series resonates with
internal bondwires of pins 14 and 15 at
2f0 to effectively short out 2nd harmonic
for optimum gain and efficiency
C10
12 pF
L3
3.3 nH
C11
4.3 pF
C9
100 pF
RF OUT
J2
Matching network for
optimum load impedance
2-112
Power supply filtering/bypassing for V PC
Rev B9 010417
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