RF2132 Просмотр технического описания (PDF) - RF Micro Devices

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RF2132

LINEAR POWER AMPLIFIER

RF Micro Devices 

2

Typical Applications

• 4.8V AMPS Cellular Handsets

• 4.8V CDMA/AMPS Handsets

• 4.8V JCDMA/TACS Handsets

RF2132

LINEAR POWER AMPLIFIER

• Driver Amplifier in Cellular Base Stations

• Portable Battery-Powered Equipment

2

Product Description

The RF2132 is a high power, high efficiency linear ampli-

fier IC. The device is manufactured on an advanced Gal-

lium Arsenide Heterojunction Bipolar Transistor (HBT)

process, and has been designed for use as the final RF

amplifier in dual-mode 4-cell CDMA/AMPS handheld digi-

tal cellular equipment, spread-spectrum systems, and

other applications in the 800MHz to 950MHz band. The

device is self-contained with 50Ω input and the output

can be easily matched to obtain optimum power, effi-

ciency, and linearity characteristics over varying supply

and control voltages.

0.158

0.150

0.392

0.386

0.021

0.014

0.069

0.064

-A-

0.009

0.004

0.050

8° MAX

0° MIN

0.244

0.230

0.035

0.016

0.010

0.008

0.060

0.054

Optimum Technology Matching® Applied

Si BJT

üGaAs HBT

GaAs MESFET

Si Bi-CMOS

SiGe HBT

Si CMOS

VCC 1

NC 2

RF IN 3

GND 4

GND 5

GND 6

GND 7

PC 8

BIAS

16 GND

15 RF OUT

14 RF OUT

13 GND

12 GND

11 RF OUT

10 RF OUT

9 GND

Package Style: Standard Batwing

Features

• Single 4.2V to 5.0V Supply

• Up to 29 dBm Linear Output Power

• 29dB Gain With Analog Gain Control

• 45% Linear Efficiency

• On-board Power Down Mode

• 800MHz to 950MHz Operation

Ordering Information

RF2132

Linear Power Amplifier

RF2132 PCBA Fully Assembled Evaluation Board

Functional Block Diagram

RF Micro Devices, Inc.

7628 Thorndike Road

Greensboro, NC 27409, USA

Tel (336) 664 1233

Fax (336) 664 0454

http://www.rfmd.com

Rev B9 010417

2-109

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