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MA4E2501-1290

SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes

M/A-COM Technology Solutions, Inc. 

MA4E2501-1290 Series

SURMOUNTTM Low Barrier

0201 Footprint Silicon Schottky Diodes

Rev. V1

Features

• Extremely Low Parasitic Capitance and Inductance

• Extremely Small 0201 (600x300um) Footprint

• Surface Mountable in Microwave Circuits , No Wirebonds

Required

• Rugged HMIC Construction with Polyimide Scratch Protection

• Reliable, Multilayer Metalization with a Diffusion

Barrier, 100% Stabilization Bake (300°C, 16 hours)

• Lower Susceptibility to ESD Damage

A

B

Description

The MA4E2501L-1290 SurMount™ Diodes are Silicon Low

Barrier Schottky Devices fabricated with the patented

Heterolithic Microwave Integrated Circuit (HMIC) process.

HMIC circuits consist of Silicon pedestals which form diodes or

via conductors embedded in a glass dielectric, which acts as the

low dispersion, microstrip transmission medium. The

combination of silicon and glass allows HMIC devices to have

excellent loss and power dissipation characteristics in a low

profile, reliable device.

The Surmount Schottky devices are excellent choices for circuits

requiring the small parasitics of a beam lead device coupled with

the superior mechanical performance of a chip. The SurMount

structure employs very low resistance silicon vias to connect the

Schottky contacts to the metalized mounting pads on the bottom

surface of the chip. These devices are reliable, repeatable, and a

lower cost performance solution to conventional devices. They

have lower susceptibility to electrostatic discharge than

conventional beam lead Schottky diodes.

The multi-layer metalization employed in the fabrication of the

Surmount Schottky junctions includes a platinum diffusion

barrier, which permits all devices to be subjected to a 16-hour

non-operating stabilization bake at 300°C.

The extremely small “ 0201 ” outline allows for Surface Mount

placement and multi-functional polarity orientations.

D

E

C

F

G

-

Cathode

+

Anode

Case Style 1290

dim.

in

mm

min. max. min. max.

A 0.023 0.025 0.575 0.625

B 0.011 0.013 0.275 0.325

C 0.004 0.008 0.102 0.203

D 0.006 0.008 0.150 0.200

E 0.007 0.009 0.175 0.225

F 0.006 0.008 0.150 0.200

G 0.009 0.011 0.220 0.270

1

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology

Solutions is considering for development. Performance is based on target specifications,

simulated results, and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications

are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be

available. Commitment to produce in volume is not guaranteed.

• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400

• India Tel: +91.80.43537383

• China Tel: +86.21.2407.1588

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

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