K4E151611C Просмотр технического описания (PDF) - Samsung
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производитель
K4E151611C Datasheet PDF : 35 Pages
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K4E171611C, K4E151611C
K4E171612C, K4E151612C
CAPACITANCE (TA=25°C, VCC=5V or 3.3V, f=1MHz)
Parameter
Symbol
Min
Input capacitance [A0 ~ A11]
CIN1
-
Input capacitance [RAS, UCAS, LCAS, W, OE]
CIN2
-
Output capacitance [DQ0 - DQ15]
CDQ
-
CMOS DRAM
Max
Units
5
pF
7
pF
7
pF
AC CHARACTERISTICS (0°C≤TA≤70°C, See note 1,2)
Test condition (5V device) : VCC=5.0V±10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.0/0.8V
Test condition (3.3V device) : VCC=3.3V±0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V
Parameter
Symbol
-45
Min
Max
-50
Min Max
Random read or write cycle time
tRC
79
84
Read-modify-write cycle time
tRWC
105
115
Access time from RAS
tRAC
45
50
Access time from CAS
tCAC
14
15
Access time from column address
tAA
23/*20
25
CAS to output in Low-Z
tCLZ
3
3
Output buffer turn-off delay from CAS
tCEZ
3
13
3
13
OE to output in Low-Z
Transition time (rise and fall)
tOLZ
3
3
tT
2
50
2
50
RAS precharge time
tRP
30
30
RAS pulse width
tRAS
45
10K
50 10K
RAS hold time
CAS hold time
tRSH
13
13
tCSH
36
40
CAS pulse width
tCAS
7 / *6.5 10K
8
10K
RAS to CAS delay time
tRCD
19
31
20
35
RAS to column address delay time
CAS to RAS precharge time
tRAD
tCRP
14
22
15
25
5
5
Row address set-up time
tASR
0
0
Row address hold time
tRAH
9
10
Column address set-up time
Column address hold time
tASC
0
0
tCAH
7
8
Column address to RAS lead time
tRAL
23
25
Read command set-up time
tRCS
0
0
Read command hold time referenced to CAS tRCH
0
0
Read command hold time referenced to RAS tRRH
0
0
Write command hold time
tWCH
8
10
Write command pulse width
tWP
8
10
Write command to RAS lead time
tRWL
10
13
Write command to CAS lead time
tCWL
7
8
* KM416C1204CT-45 (5V, 1K Refresh) only
-60
Min Max
104
140
60
17
30
3
3
15
3
2
50
40
60
10K
17
50
10
10K
20
43
15
30
5
0
10
0
10
30
0
0
0
10
10
15
10
Units Notes
ns
ns
ns 3,4,10
ns 3,4,5
ns
3,10
ns
3
ns
6,19
ns
3
ns
2
ns
ns
ns
ns
ns
18
ns
4
ns
10
ns
ns
ns
ns
11
ns
11
ns
ns
ns
8
ns
8
ns
ns
ns
ns
14
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