D669 Просмотр технического описания (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd
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Компоненты Описание
производитель
D669 Datasheet PDF : 4 Pages
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Ta=25 Я unless otherwise specified
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO IC=1mA, IE=0
180
V
2DS669 120
V(BR)CEO IC=10mA, IB=0
2SD669A 160
V
V(BR)EBO IE=1mA, IC=0
5
V
ICBO
VCB=160V, IE=0
10
µA
IEBO
VEB=4V, IC=0
2SD669
60
hFE(1) VCE=5V, IC=150mA
2SD669A 60
10
µA
320
200
hFE(2) VCE=5V, IC=500mA
30
VCE(sat) IC=500mA, IB=50mA
1
V
VBE
VCE=5V, IC=150mA
1.5
V
fT
VCE=5V, IC=150mA
140
MHz
Cob
VCB=10V, IE=0, f=1MHz
14
pF
CLASSIFICATION OF hFE(1)
Rank
Range 2SD669
2SD669A
B
60-120
60-120
C
100-200
100-200
D
160-320
www.cj-elec.com
2
D,Aug,2017
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