MGS05N60D Просмотр технического описания (PDF) - ON Semiconductor
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MGS05N60D Datasheet PDF : 6 Pages
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2.5
TC = 25°C
2.0
VGE = 15 V
12.5 V 10 V
1.5
8.0 V
1.0
0.5
0
1
2
3
4
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 1. Saturation Characteristics
2.5
TC = 150°C
2.0
VGE = 15 V
MGS05N60D
12.5 V 10 V
1.5
8.0 V
1.0
0.5
0
0
1
2
3
4
5
6
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 2. Saturation Characteristics
2.5
TC = –20°C
2.0
VGE = 15 V
12.5 V 10 V
1.5
8.0 V
1.0
0.5
0
1
2
3
4
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 3. Saturation Characteristics
22
TC = 150°C
–20°C
17
25°C
12
7
2
0
0.5
1.0
1.5
2.0
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
Figure 5. Diode Forward Voltage Drop
2.0
IC = 700 mA
1.9
500 mA
1.8
1.7
300 mA
1.6
1.5
VG = 15 V
1.4
–25 0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
Figure 4. Collector–To–Emitter Saturation
Voltage versus Case Temperature
10
IC = 500 mA
8
6 300 mA
4
100 mA
2
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
Figure 6. Diode Forward Voltage versus Case
Temperature
Motorola IGBT Device Data
3
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