MGS05N60D Просмотр технического описания (PDF) - ON Semiconductor
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MGS05N60D Datasheet PDF : 6 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
™ Designer's Data Sheet
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This IGBT contains a built–in free wheeling diode and a gate
protection zener diodes. Fast switching characteristics result in
efficient operation at higher frequencies. This device is ideally
suited for high frequency electronic ballasts.
• Built–In Free Wheeling Diodes
• Built–In Gate Protection Zener Diode
• Industry Standard Package (TO92 — 1.0 Watt)
m • High Speed Eoff: Typical 6.5 J @ IC = 0.3 A; TC = 125°C and
m dV/dt = 1000 V/ s
• Robust High Voltage Termination
• Robust Turn–Off SOA
C
G
Order this document
by MGS05N60D/D
MGS05N60D
IGBT
0.5 A @ 25°C
600 V
E
C
G
E
CASE 029–05
STYLE 35
TO–226AE
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameters
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Gate Voltage (RGE = 1.0 MΩ)
Gate–Emitter Voltage — Continuous
Collector Current — Continuous @ TC = 25°C
Collector Current — Continuous @ TC = 90°C
Collector Current — Repetitive Pulsed Current (1)
VCES
VCGR
VGES
IC25
IC90
ICM
600
Vdc
600
Vdc
± 15
Vdc
0.5
Adc
0.3
2.0
Total Power Dissipation
Operating and Storage Junction Temperature Range
PD
TJ, Tstg
1.0
– 55 to 150
Watt
°C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case – IGBT
Thermal Resistance — Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
RθJC
RθJA
TL
25
°C/W
125
260
°C
UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (TC ≤ 150°C)
Single Pulse Drain–to–Source Avalanche
Energy – Starting @ TC = 25°C
W Energy – Starting @ TC = 125°C
VCE = 100 V, VGE = 15 V, Peak IL = 2.0 A, L = 3.0 mH, RG = 25
EAS
mJ
125
40
(1) Pulse width is limited by maximum junction temperature repetitive rating.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s is a trademark of Motorola, Inc.
REV 2
© MMoototororloa,laIncIG. 1B99T8 Device Data
1
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