2SB649 Просмотр технического описания (PDF) - Quanzhou Jinmei Electronic
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производитель
2SB649 Datasheet PDF : 4 Pages
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JMnic
Silicon PNP Power Transistors
Product Specification
2SB649 2SB649A
DESCRIPTION
·
·With TO-126 package
·Complement to type 2SD669/669A
·High breakdown voltage VCEO:-120/-160V
·High current -1.5A
·Low saturation voltage,excellent hFE linearity
APPLICATIONS
·For low-frequency power
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2SB649
2SB649A
Open emitter
VCEO
Collector-emitter voltage
2SB649
2SB649A
Open base
VEBO
Emitter-base voltage
Open collector
IC
Collector current (DC)
ICM
Collector current-Peak
PD
Total power dissipation
Ta=25℃
TC=25℃
Tj
Junction temperature
Tstg
Storage temperature
VALUE
-180
-180
-120
-160
-5
-1.5
-3
1
20
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
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