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VO4154 Просмотр технического описания (PDF) - Vishay Semiconductors

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VO4154 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
VO4154/VO4156
Vishay Semiconductors Optocoupler, Phototriac Output,
Zero Crossing, High dV/dt, Low Input
Current
ELECTRICAL CHARACTERISTCS
PARAMETER
TEST CONDITION
PART
SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage
IF = 10 mA
VF
1.2
1.4
V
Reverse current
Input capacitance
OUTPUT
VR = 6 V
VF = 0 V, f = 1 MHz
IR
0.1
10
µA
CI
25
pF
Repetitive peak off-state voltage
Off-state current
IDRM = 100 µA
VD = VDRM, IF = 0
VO4154D/H/M VDRM
400
VO4156D/H/M VDRM
600
IDRM
V
V
100
µA
On-state voltage
On-state current
Off-state current in inhibit state
IT = 300 mA
PF = 1, VT(RMS) = 1.7 V
IF = 2 mA, VDRM
VTM
ITM
IDINH
3
V
300
mA
200
µA
Holding current
Zero cross inhibit voltage
Critical rate of rise of off-state
voltage
IF = rated IFT
VD = 0.67 VDRM, TJ = 25 °C
IH
VIH
dV/dtcr
5000
500
µA
20
V
V/µs
Critical rate of rise of on-state
COUPLER
dV/dtcr
8
A/µs
VO4154D
IFT
1.6
mA
LED trigger current,
current required to latch output
VD = 3 V
VO4154H
IFT
VO4154M
IFT
VO4156D
IFT
2
mA
3
mA
1.6
mA
Common mode coupling capacitance
VO4156H
VO4156M
IFT
IFT
CCM
2
mA
3
mA
0.01
pF
Capacitance (input-output)
f = 1 MHz, VIO = 0 V
CIO
0.8
pF
Note
Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
SAFETY AND INSULATION RATINGS
PARAMETER
Climatic classification (according to IEC 68 part 1)
Pollution degree (DIN VDE 0109)
Comparative tracking index per DIN IEC 112/VDE 0303 part 1,
group IIIa per DIN VDE 6110 175 399
VIOTM
VIORM
PSO
ISI
TSI
Creepage
Crearance
TEST CONDITION SYMBOL
VIOTM
VIORM
PSO
ISI
TSI
MIN.
175
8000
890
7
7
TYP.
55/100/21
2
MAX.
399
500
250
175
UNIT
V
V
mW
mA
°C
mm
mm
www.vishay.com
4
For technical questions, contact: optocouplers.answers@vishay.com
Document Number: 84797
Rev. 1.4, 30-Aug-06

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