TPB180 Просмотр технического описания (PDF) - STMicroelectronics

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TPB180

TRISIL™

STMicroelectronics 

TEST CIRCUIT 1 FOR IBO and VBO parameters:

Auto

Transformer

2 20 V/ 2A

tp = 20ms

R1

static

140

relay.

R2

240

Vout

K

IBO

measure

D.U.T

TPB SERIES

VBO

measure

Transformer

2 20 V/ 8 00 V

5A

TEST PROCEDURE :

Pulse Test duration (tp = 20ms):

- For Bidirectional devices = Switch K is closed

- For Unidirectional devices = Switch K is open.

VOUT Selection

- Device with VBO ≤ 200 Volt

- VOUT = 250 VRMS, R1 = 140 Ω.

- Device with VBO ≥ 200 Volt

- VOUT = 480 VRMS, R2 = 240 Ω.

TEST CIRCUIT 2 for IH parameter

R

VBAT = - 48 V

D.U.T.

- VP

Surge generator

This is a GO-NO GO test which allows to confirm the holding current (IH) level in a functional test circuit.

TEST PROCEDURE :

- Adjust the current level at the IH value by short circuiting the D.U.T.

- Fire the D.U.T. with a surge current : Ipp = 10A, 10/1000 µs.

- The D.U.T. will come back to the off-state within 50 ms max.

3/5

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