SSI10N60B Просмотр технического описания (PDF) - Fairchild Semiconductor
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производитель
SSI10N60B Datasheet PDF : 9 Pages
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Typical Characteristics
VGS
Top : 15.0 V
10.0 V
8.0 V
101
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
100
10-1
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
2.5
2.0
V = 10V
GS
1.5
VGS = 20V
1.0
0.5
※ Note : TJ = 25℃
0.0
0
5
10
15
20
25
30
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
4000
3000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
C
iss
2000
1000
Coss
※ Notes :
C
rss
1. VGS = 0 V
2. f = 1 MHz
0
10-1
100
101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
101
150oC
100
25oC
10-1
2
-55oC
※ Notes :
1. V = 40V
2. 25DS0μ s Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150℃
25℃
※ Notes :
1.
2.
V25G0S μ=
0V
s Pulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
V = 120V
DS
V = 300V
DS
8
V = 480V
DS
6
4
2
※ Note : I = 10 A
D
0
0
10
20
30
40
50
60
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
Rev. B, November 2001
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