FQA28N50F Просмотр технического описания (PDF) - Fairchild Semiconductor
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FQA28N50F Datasheet PDF : 8 Pages
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Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
500 --
ID = 250 µA, Referenced to 25°C -- 0.5
IDSS
Zero Gate Voltage Drain Current
VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125°C
--
--
--
--
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
--
--
--
--
--
50
500
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
3.0 --
5.0
V
VGS = 10 V, ID = 14.2 A
-- 0.126 0.16
Ω
VDS = 50 V, ID = 14.2 A (Note 4) --
28
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 4300 5600 pF
-- 640 830
pF
-- 60
80
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 250 V, ID = 28.4 A,
RG = 25 Ω
-- 100 210
ns
-- 290 590
ns
-- 250 510
ns
(Note 4, 5)
--
175
360
ns
VDS = 400 V, ID = 28.4 A,
-- 110 140
nC
VGS = 10 V
-- 32
--
nC
(Note 4, 5) --
59
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 28.4 A
--
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 28.4 A,
--
dIF / dt = 100 A/µs
(Note 4)
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 2.9mH, IAS = 28.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 28.4A, di/dt ≤ 350A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
-- 28.4
A
-- 113.6 A
--
1.4
V
--
250
ns
1.2
--
µC
©2001 Fairchild Semiconductor Corporation
Rev. A2, September 2001
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