BY269 Просмотр технического описания (PDF) - New Jersey Semiconductor
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BY269 Datasheet PDF : 2 Pages
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^zmi-Lonductot ^Pioducti, (inc..
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Fast Avalanche Sinterglass Diode
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
BY268.BY269
Features
• Glass passivated junction
• Hermetically sealed package
Applications
High voltage fast rectification diode
Mechanical Data
Case: Sintered glass case, SOD 57
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Parts Table
Part
BY268
BY269
Type differentiation
VR = 1400V; IFAV = 0.8A
VR = 1600V; IFAV = 0.8A
Weight: 370 mg, (max. 500 mg)
SOD57
SOD57
Package
Absolute MaximumRatings
Tamb = 25 °C, unless otherwise specified
Parameter
Peak reverse voltage, non repetitive
Test condition
Reverse voltage
Peak forward surge current
Average forward current
Junction and storage temperature range
Non repetitive reverse avalanche energy
see electrical characteristics
see electrical characteristics
tp = 10 rns, half sinewave
I(BR)R = °-4 A
Maximum Thermal Resistance
Tamb = 25 °C, unless otherwise specified
Parameter
Junction ambient
Test condition
on PC board with spacing 25 mm
L = 10 mm, TL = constant
Sub type
Sub type Symbol Value Unit
BY268
VRSM 1600
V
BY269
VRSM 1800
V
BY268
VR
1400
V
BY269
VR
1600
V
'FSM
20
A
IFAV
0.8
A
T, = Tslg - 55 to + °C
175
ER
10
mj
Symbol
Value
Unit
RthJA
100
K/W
^thJA
45
K/W
N.I .Semi-conductors reserves the righl to change test conditions, parameter limits ;md pacfcuge dimensions vvithotil notice
Information furnished by Nl Semi-Conductors it believed to heboth accurate ami reliable at the time of going to press. However \
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