BC556 Просмотр технического описания (PDF) - Weitron Technology

Номер в каталоге

Компоненты Описание

производитель

BC556

PNP General Purpose Transistor

Weitron Technology 

PNP General Purpose Transistor

Maximum Ratings ( TA=25℃C unless otherwise noted)

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current Continuous

Symbol

VECO

VCBO

VEBO

lC

BC556

-65

-80

-5

BC556, A/B

BC557, A/B/C

BC558, A/B/C

COLLECTOR

3

2

BASE

1

EMITTER

TO-92

1

2

3

BC557

-45

-50

-5

100

BC558

-30

-30

-5

Unit

Vdc

Vdc

Vdc

mAdc

THERMAL CHARACTERISTICS

Characteristics

Total Device Dissipation

Alumina Substrate, TA = 25℃C

BC556

BC557

BC558

Junction and Storage, Temperature

BC556

BC557

BC558

Symbol

PD

TJ, Tstg

Max

625

-55 to +150

Unit

mW/ ℃C

℃C

ELECTRICAL CHARACTERISTICS

Characteristics

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(lC= 2 mAdc. lB=0)

Collector-Base Breakdown Voltage

(lC= 100 mAdc. lE=0)

Emitter-Base Breakdown Voltage

(lE = 100 mAdc. lC=0)

Symbol Min Max

Unit

BC556

-65

BC557

V(BR)CEO -45

Vdc

BC558

-30

BC556

-80

BC557

V(BR)CBO -50

Vdc

BC558

-30

BC556

BC557

V(BR)EBO -5

Vdc

BC558

WEITRON

1/5

http://www.weitron.com.tw

26-Apr-05

Share Link: