IXFX24N100F Просмотр технического описания (PDF) - IXYS CORPORATION
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IXFX24N100F Datasheet PDF : 2 Pages
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Advance Technical Information
HiPerRFTM
Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low Intrinsic Rg
High dV/dt, Low trr
IXFX 24N100F
IXFK 24N100F
VDSS = 1000 V
ID25 = 24 A
RDS(on) = 0.39 Ω
trr ≤ 250 ns
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
P
D
TJ
T
JM
Tstg
T
L
Md
Weight
Symbol
V
DSS
VGS(th)
IGSS
IDSS
RDS(on)
PLUS 247TM (IXFX)
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque TO-264
PLUS 247
TO-264
1000
1000
±20
±30
24
96
24
60
3.0
10
V
V
V
V
A
A
A
mJ
J
V/ns
G
D
TO-264 AA (IXFK)
(TAB)
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
560
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
0.4/6 Nm/lb.in.
6
g
10
g
Features
l RF capable MOSFETs
l Double metal process for low gate
resistance
l Unclamped Inductive Switching (UIS)
rated
l Low package inductance
- easy to drive and to protect
l Fast intrinsic rectifier
Applications
Test Conditions
V = 0 V, I = 1mA
GS
D
VDS = VGS, ID = 8mA
VGS = ±20 V, VDS = 0
VDS = VDSS
VGS = 0 V
VGS = 10 V, ID = 0.5 ID25
Note 1
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
1000
V
3.0
5.5 V
±200 nA
TJ = 25°C
TJ = 125°C
100 µA
3 mA
0.39 Ω
l DC-DC converters
l Switched-mode and resonant-mode
power supplies, >500kHz switching
l DC choppers
l Pulsegeneration
l Laser drivers
Advantages
l PLUS 247TM package for clip or spring
mounting
l Space savings
l High power density
© 2002 IXYS All rights reserved
98874 (1/02)
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