FQB33N10 Просмотр технического описания (PDF) - Fairchild Semiconductor
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производитель
FQB33N10 Datasheet PDF : 9 Pages
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Typical Characteristics
102 Top
15.V0GVS
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
101
100
101
Notes
1. 250s Pulse Test
2. TC 25
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
0.20
0.15
0.10
V = 10V
GS
V = 20V
GS
0.05
0.00
0
Note T 25
20
40
60
80
100
120
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3000
2500
Ciss Cgs + Cgd (Cds shorted)
Coss Cds + Cgd
Crss Cgd
2000
1500
Ciss
Coss
Notes
1. VGS 0 V
2. f 1 MHz
1000
Css
500
0
10-1
100
101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
102
101
175
25
-55
Notes
1. VDS 40V
2. 250s Pulse Test
100
2
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
102
101
100
0.2
175
25
Notes
1. V 0V
GS
2. 250s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
V , Source-Drain voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = 50V
10
DS
V = 80V
DS
8
6
4
2
Note I 33A
D
0
0
5
10
15
20
25
30
35
40
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2000 Fairchild Semiconductor International
Rev. A, April 2000
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