T2322 Просмотр технического описания (PDF) - Motorola => Freescale

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T2322

Sensitive Gate Triac Silicon Bidirectional Triode Thyristor

Motorola => Freescale 

T2322 T2323 Series

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Thermal Resistance, Junction to Case

RθJC

3.5

Thermal Resistance, Junction to Ambient

RθJA

60

ELECTRICAL CHARACTERISTICS (TC = 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Peak Blocking Current

(VD = Rated VDRM, Gate Open)

Peak On-State Voltage*

(ITM = 10 A)

TJ = 25°C

TJ = 100°C

T2323 Series

T2322 Series

IDRM

VTM

—

—

—

0.2

—

1.7

—

1.7

Gate Trigger Current (Continuous dc)

(VD = 12 V, RL = 30 Ω)

All Modes

MT2(+), G(+); MT2(–), G(–)

MT2(+), G(–); MT2(–),I G(+)

T2322 Series

T2323 Series

T2323 Series

IGT

—

—

—

—

—

—

Gate Trigger Voltage (Continuous dc)

(VD = 12 Vdc, RL = 30 Ω, TC = 25°C)

(VD = VDRM, RL = 125 Ω, TC = 100°C)

Holding Current

(VD = 12 V, ITM = 150 mA, Gate Open)

Gate Controlled Turn-On Time

(VD = Rated VDRM, ITM = 10 A pk, IG = 60 mA)

Critical Rate-of-Rise of Off-State Voltage

(VD = Rated VDRM, Exponential Waveform, TC = 100°C)

Critical Rate-of-Rise of Commutation Voltage

(VD = Rated VDRM, ITM = 3.5 A pk, Commutating

di/dt = 1.26 A/ms, Gate Unenergized, TC = 90°C)

p p *Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.

VGT

IH

tgt

dv/dt

dv/dt(c)

—

1

0.15

—

—

15

—

1.8

10

100

1

4

Unit

°C/W

°C/W

Max

Unit

10

µA

0.75

mA

Volts

2.6

2.2

mA

10

25

40

Volts

2.2

—

30

mA

2.5

µs

—

V/µs

—

V/µs

2

Motorola Thyristor Device Data

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